Abstract
Abstract : Thin GaAs films have been deposited by sputtering with co-sputtering of As and impurity targets. These films have been deposited onto n-type GaAs substrates for Schottky barrier measurements and Cr-doped semi-insulating substrates for conductivity and Hall effect measurements. The measurements on Schottky barriers formed by deposition of aluminum contacts onto the films of GaAs indicated that the simple Schottky barrier model does not hold for these films. An analysis of the capacitance-voltage characteristics of this device is presented and leads to a small signal model consisting of two parallel RC circuits in series. Further analysis of this circuit results in a determination of the electrical properties of the thin films.
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