Abstract
Mn-modified Bi1.05FeO3 thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by using a pulsed laser deposition method with BFO oxide targets modified with MnO or MnO2, and the effects of the Mn were investigated. The 3% MnO-modified BFO thin film capacitor exhibited a large remnant polarization (2P r = 179 µC/cm2) and low leakage currents over a wide electric-field range. However, different leakage current behaviors were observed in the 10% MnO-modified and 10% MnO2-modified BFO thin films. The leakage current mechanism of the 10% MnO-modified BFO thin film was Ohmic conduction while that of the 10% MnO2-modified BFO thin film was related to the oxygen vacancy-associated electrical conductivity.
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