Abstract
The electrical properties of undoped and doped with indium Hg1−xCdxTe (x ≈ 0.3) films grown by the MBE method on Si (0 1 3) were investigated. In as-grown films, staking faults and trending dislocations with densities of ∼106 cm−2 and ∼107 cm−2, respectively, are observed. Annealing films under conditions causing the formation of mercury vacancies leads to drastic decrease of the staking faults (<104 cm−2). Filling vacancies leads to a decrease in the contribution of Shockley-Read recombination and to an increase in the lifetime. The dominant generation-recombination level in the as-grown Hg1−xCdxTe/Si(0 1 3) is the level associated with the vacancies. The magnetic field dependences of the Hall effect in the magnetic field range of 0.05–1.0 T at 77 K were explained by the fact that, in the films, there are two types of electrons with high and low mobilities.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
