Electrical properties of the diamond like carbon films irradiated with high energy photons

Abstract

SiOx—containing amorphous diamond like carbon (DLC) is very attractive material for a number of practical applications. DLC films are possible candidates for the formation of passive layers in electronic devices and are used as protective coatings. Both applications are interesting for the construction of medical radiation detectors. Radiation induced structural changes and electrical properties of DLC: SiOx films (undoped and co-doped) synthesized at room temperature by means of direct ion beam deposition method were investigated after their irradiation with high energy (Emax = 15 MeV) X-ray photons. It was found that transparency of the irradiated DLC films was not changed significantly, as compared to initial samples, stating only small increase of the optical band gap in DLC films. However radiation induced changes were dependent on co-doping and film deposition conditions which were responsible for the sp3/sp2 ratio and hydrogen content in the investigated films. Analysis of U-I characteristics showed decreasing tendency of the leakage current in the range 0–20 V and especially high dependency of breakdown voltage on the deposited contact area in irradiated films as compared to initial samples. Possible mechanism of radiation induced changes in irradiated DLC films is discussed on the basis of the results of Raman and Infrared spectroscopy.