Abstract
PbLaZrTiOx(PLZT) thin films were fabricated on Pt(111) substrateby the sol-gel method for ferroelectric capacitors. Pt top electrodeswere deposited by sputtering, aluminum-doped zinc oxide (AZO)or indium tin oxide (ITO) top electrodes were deposited by pulsedlaser deposition (PLD) on PLZT capacitors. We compared bothdegradation characteristics by annealing in 200°C, 1Torr, 3%hydrogen atmosphere and fatigue properties, exhibited the PLZTcapacitors with AZO and ITO top electrodes has better propertiescompared to the PLZT capacitors with Pt top electrodes.
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