Abstract
Experimental data are presented for the influence of helium plasma on the electrical properties of Si−SiO 2 structures with dry thermal oxide (d=16−72 nm). It is found that for strongly damaged structures low temperature helium plasma introduces acceptor-type interface states near the conduction band edge and has an annealing effect on the deep acceptor-type states. It has also shown that the initial characteristics of the Si−SiO 2 structures and the gas used are critical for the plasma-forming of both the interface and inversion channel properties.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
