Abstract
In this paper we report the study of the change in electrical properties of semiconducting carbon nanotubes (CNTs) under uniaxial compressive deformations using the “Vienna ab initio simulation package” (VASP). We present an extension of density functional theory calculations to the electronic properties of the tubes, namely the density of states obtained for the optimized geometries of the tubes. There is an energy gap of 0.772 eV between occupied and unoccupied region in the optimized structure calculation. The band gap for the semi-conducting zigzag (10,0) CNTs decreases as the strain increases. It suggests that the semiconducting CNTs may become semimetal or metal upon deformation.
Published Version
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