Abstract
It is ascertained that implantation of 1-MeV ytterbium ions with a dose of 1013 cm−2 into silicon with subsequent annealing at temperatures of 600–1100°C gives rise to donor centers. The donor-center concentration is higher in the samples implanted additionally with oxygen ions. The results show that at least two types of donor centers are formed; these centers contain either ytterbium or oxygen impurity atoms. The dependence of electron mobility on the concentration of electrically active centers in the silicon layers implanted with the ytterbium rare-earth ions is determined in the concentration range of 7×1015–1017 cm−3.
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