Abstract
Very thin films of silicon dioxide grown in a conventional dry oxidation process often suffer from poor electrical quality due to the presence of various defects. A low dielectric breakdown is, in particular, detrimental to the operation of many electronic devices. We have attempted to improve this situation by modifying the dry oxidation process. We show that oxides grown in oxygen ambient and under atmospheric pressure, which are postannealed for a long period of time in an inert atmosphere and then reoxidized for a short time, have considerably improved values of both the magnitude and distribution of the electric field at the dielectric breakdown. Very few low‐field dielectric breakdown events are encountered and the breakdown field histogram assumes a very narrow shape.
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