Abstract
A deep amorphization and solid phase epitaxial regrowth (AR) process to convert the initial crystal orientation has been investigated with the aim of co-integrating the (100) and the (110) Si surfaces on a buried oxide. P-channel metal oxide silicon field effect transistors(PMOSFETs) were fabricated on 20-nm-thick Si film silicon-on-insulator(SOI) wafers with and without the AR process. The electrical properties, such as the carrier mobility, transconductance, threshold voltage, and sub-threshold slope, were analyzed by comparing the AR-processed and the reference devices. The experimental results show that the AR process does not alter the original electrical properties of the material. Both (100)- and (110)- oriented Si films could be integrated on a continuous buried oxide.
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