Abstract
Together with high-κ dielectric films, metal gate electrodes have to be employed in advanced CMOS technologies. The metal gate material should be carefully selected with respect to work function, stability of metal-dielectric stack and compatibility with the CMOS process. In our investigation Ni gate electrodes grown on thermal SiO2, atomic-layer deposition HfO2 and Al2O3 dielectric films have been analyzed by means of high-frequency capacitance–voltage measurement on MOS capacitors. Ni gate materials were prepared by RF diode sputter deposition. Work function of the investigated gate material and density of effective defect charge of the gate oxide film were extracted from the measurements. These properties are discussed with regard to application of Ni metal gates in CMOS technology.
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