Abstract
Electrical properties of MOS capacitors made of Zr-doped hafnium oxide high-k gate dielectric with molybdenum and copper gate electrodes have been studied. Under the thermal annealing condition, the reaction between the gate electrode and gate dielectric is highly dependent on the electrode material. The C-V characteristics of the molybdenum gated capacitor are improved with the post metal annealing due to the reduction of defects. However, the copper gated capacitor deteriorated after the annealing step due to the diffusion of copper into the gate dielectric layer. Therefore, the metal gate material is critical to the electrical properties of the MOS capacitor with the high-k gate dielectric film.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
