Abstract
For the first time, the electrical characteristics of the metal–insulator–semiconductor (MIS) structures based on n(p)-Hg1−xCdxTe grown by molecular beam epitaxy including HgTe single quantum well (SQW) with thickness of 6.5 nm were investigated. SQW significantly influences the voltage, frequency, and temperature dependencies of the admittance of the MIS structure. When the SQW thickness is less than the critical thickness, there are numerous sharp maxima in the capacitance–voltage (C–V) curve, and when the thickness of the well is close to the critical thickness, a wide maximum is observed in the C–V characteristics associated with overshoot of minority charge carriers from SQW. A distinction is revealed between the effect of radiation on capacitive maxima caused by the escape of charge carriers from SQW and the recharging of deep levels in the epitaxial film bulk.
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