Abstract
Hall-effect and space-charge-limited-current (SCLC) measurements were performed on Cl-doped GaSe single crystals grown by the Bridgmann–Stockbarger method. The temperature dependence of the free electron density shows the characteristics of a partially compensated n-type semiconductor. The electrical properties are dominated by a deep donor level at about 0.57 eV below the conduction band. An electron trapping level between 0.56 and 0.62 eV below the conduction band has been observed by SCLC measurements. The trapping level concentration depends on the amount of dopant. Finally, the conduction band density-of-states effective mass was estimated to be 1.1 m0.
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