Abstract
Growth of modulation-doped HgTe–CdTe superlattices (SLs) at very low temperatures (140 °C) by photoassisted molecular beam epitaxy is reported. SL layer thicknesses were intentionally chosen such that most of the SLs studied are inverted-band semimetals or inverted-band semiconductors. Both p- and n-type samples were successfully prepared and studied. The doped superlattices exhibit excellent electrical properties. Lack of carrier freeze-out at low temperatures provides convincing evidence that modulation-doping has been achieved.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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