Abstract
Electrical properties are investigated for metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures containing insulating Langmuir-Blodgett polydiacetylene (LBPDA) thin films. Schottky-type conduction currents are observed for MIM devices. Thermally stimulated currents (TSCs) of MIM diodes with LBPDA mono- and multilayers are measured. The TSC characteristics of the divices show dipolar polarization of the LBPDA mono-and multilayers below room temperature and charge injection from the electrodes above room temperature. From the TSC measurements, it is observed that an order-to-disorder structure change of the LBPDA films by annealing enhances the dipolar polarization. Capacitance-voltage ( C-V) characteristics are measured for A1/LBPDA/Si (MIS) structures. The C-V curves show hysteresis, and remarkable flat-band voltage shifts are observed after bias stressing is applied. These results show that both holes and electrons are easily injected from silicon into the LBPDA layers of the MIS devices.
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