Electrical properties of isotype heterojunctions n-TiN/n-Si

Abstract

Titanium nitride and silicon are promising materials for use in various photoelectric devices due to their physical properties, so the research of the isotype heterojunctions n-TiN/n-Si is of considerable interest. The article studies the electrical properties of the heterojunctions formed by deposition of thin-film ТiN of conductivity of n-type on single crystal supports of Si of conductivity of n-type by the method of reactive magnetron sputtering of pure titanium target in mixtures of argon and nitrogen at continuous voltage. The partial pressures of argon and nitrogen are 0.35 Pa and 0.7 Pa, respectively, at constant magnetron power 120 watts. The volt - ampere characteristics of the heterojunction TiN / Si were measured by the measuring complex SOLARTRON SI 1286, SI 1255. There is an analysis of temperature dependence of height of potential barrier and successive resistance of the heterojunction. The concentration of surface states (mismatch dislocations) N ss at the heterojunctions interface constitutes 2.67 × 10 13 sm -2 . It was determined that the dominant mechanism of current flow through the heterojunction n-TiN/n-Si at direct bias is well described in the tunnel model