Abstract
High-quality single-crystalline GaP nanowires were grown by a simple vapourdeposition method and their electrical and opto-electric transport properties werestudied. Structural studies showed that the GaP nanowires consisted of acore–shell structure with a single-crystalline GaP core and an outer gallium oxide(GaOx) layer of thickness nm. The individual GaP nanowires exhibited n-type field effects with an on/off ratio as high as105 and their carrier mobilities are in the range of about10–22 cm2 V−1 s−1 at room temperature. When the devices were exposed to an ultraviolet (UV)light source, the current in the nanowires increased abruptly to more than103 times, and this was possibly due to carrier generation in the nanowires and de-adsorption of adsorbedO2− ionson the GaOx surface shell. The nanowires also showed good reversible switching actions between thehigh- and low-resistance states.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
