Abstract
Resistivity, Hall effect and deep level transient spectroscopy measurements have been performed on Sn-doped InSe single crystals grown by the Bridgman-Stockbarger method. The electrical properties of the investigated samples are dominated by a donor level attributed to the dopant at about 50 meV from the conduction band. The temperature dependence of electron Hall mobility is explained by combining the optical phonon, the ionized and the neutral impurity scatterings. According to Schimd's model an electron-phonon coupling constant g2 = 0.065 is determined. Finally, an electron trap has been detected at about 0.62 eV below the conduction band with a capture cross section of about 5 × 10−16cm2.
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