Abstract
The structure and electrical properties of transparent indium-oxide thin films produced by plasma-enhanced reactive thermal evaporation at different substrate temperatures are studied. It is found that the films have a grained structure. An increase in the substrate temperature yields a considerable increase in the conductivity of the films and a decrease in the photoconductivity-relaxation time. An interpretation of the effect of the substrate temperature on the observed changes in the electrical and photoelectric properties of the indium-oxide films under study is proposed.
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