Abstract
Metal oxide semiconductors with several degrees of crystalline perfection were prepared to evaluate their sensitivity to hydrogen and ethanol gasses. Highly oriented In2O3 polycrystalline films were formed at substrate temperatures of (a) 350°C, (b) 450°C and (c) 550°C on fused quartz substrates. Samples (a), (c) and (b) are in the order of small crystallite size observed in the polycrystalline film. The resistivity of samples (a) and (c) varied with hydrogen and ethanol concentrations indicating a higher sensitivity than sample (b). The degree of crystalline perfection of the film might affect the gas sensitive resistivity
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