Abstract
Antiferroelectric PbZrO 3 thin films were grown on Pt/Ti/SiO 2/Si substrates with predominant (111) orientation using a sol–gel process. The Pt/PbZrO 3/Pt film capacitor showed well-saturated hysteresis loops at an applied voltage of 5 V with remanent polarisation ( P r) and coercive electric field ( E c) values of 8.97 μC/cm 2 and 162 kV/cm, respectively. The leakage current density of the highly (111)-oriented PbZrO 3 film was less than 1.0×10 −7 A/cm 2 over electric field ranges from 0 to 105 kV/cm. The conduction current depended on the voltage polarity. The PbZrO 3/Pt interface forms a Schottky barrier at electric fields from 20 to 160 kV/cm. The dielectric relaxation current behaviour of Pt/PbZrO 3/Pt capacitor obeys the well-known Curie–Von Schweidler law at electric field of 20–80 kV/cm, the currents have contributions of both dielectric relaxation current and leakage current.
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