Abstract
Electrical properties of GaN-based heterostructures adopting InAlN/AlGaN bilayer barriers are investigated by Hall-effect and current–voltage measurements. It is found that this structure possesses both merits of high two-dimensional electron gas (2DEG) density and low gate leakage current density, while maintaining high 2DEG mobility. Furthermore, temperature dependence of the 2DEG density in this structure is verified to follow a combined tendency of InAlN/GaN (increase) and AlGaN/GaN (decrease) heterostructures with increasing temperature from 90K to 400K, which is mainly caused by superposition of the effects from carrier thermal activation induced by extrinsic factors in InAlN layer and the reduced conduction-band discontinuity.
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