Abstract
The effect of electron irradiation (E = 7, D = 1016–1018 cm–2) followed by heat treatment in the temperature range 100–1000°С on the electrical properties of undoped (n = 1⋅1014–1⋅1016 сm–3), medium- ((n = 1.2–2)⋅1017 сm–3), and heavily silicon-doped (n = (2–3.5)⋅1018 сm–3) epitaxial n-GaN films grown on the Al2O3(0001) substrates using MOCVD technology is discussed. Under electron irradiation, an increase in the specific resistivity of n-GaN and the pinning of the Fermi level in the limit position near E c – 0.9 eV is observed. Restoration of the initial properties of irradiated material is investigated in the temperature range 100–1000°С. A stage of a “reverse” annealing is revealed in the temperature range 300–400°C.
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