Abstract
P-type doping is essential for tuning the electron transport characteristics of graphene for variety of applications in electronics. We demonstrate stable p-type boron doped bi-layer graphene on quartz substrate obtained by using spin-on dopant (SOD) process. Transport properties such as sheet carrier density, sheet resistivity and Hall mobility are found to be independent of temperature (10K-300K) indicating degenerate doping of bilayer graphene.
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