Abstract
n-type silicon wafers were doped by boron using a spin-on doping method. A XeCl pulsed excimer laser was used to irradiate the sample at room temperature. Properties such as sheet resistance, carrier concentration profile, Hall mobility and structural defects were then determined. The results show that the sheet resistance decreases with an increase of laser fluence as well as with an increase in pulse number. It attains a low value of for laser fluence above . An optimal doping profile with surface carrier concentration of and a junction depth of was achieved by 25 pulses of irradiation. Channelled Rutherford backscattering spectroscopy showed that no obvious lattice damage exists in the doped Si wafer.
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