Electrical properties of d.c. sputtered InAs thin films

Abstract

InAs decomposes if tried to deposit by vacuum evaporation. In this work InAs has been deposited by d.c. sputtering. For 210 W power, a deposition rate of 40 A/min was obtained. The thickness of the deposit was linear with time which shows the deposit thickness can be controlled by the time of deposition accurately. The sputtered film of InAs shows a hall mobility of 7 cm 2 V -1 s -1. The low mobility may be due to highly disordered structure and impurities present.