Abstract
Nonvacuum process technology was used to produce Cs3Sb photocathodes on substrates, and in situ panel devices were fabricated. The performance of the devices was characterized by measuring anode current as functions of the devices' operation times. An excitation light source with 475 nm wavelength was used for the photocathodes. The device has a simple diode structure, providing unique characteristics such as a large gap, vertical electron beam directionality, and resistance to surface contamination from ion bombardment and poisoning by outgassing species. Accordingly, Cs3Sb photocathodes function as flat emitters, and the emission properties of the photocathode emitters depend on the vacuum level of the devices. Improvement of current stability has been observed after conducting the electrical conditioning process to remove possible adsorbates on Cs3Sb flat emitters.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
