Abstract
Abstract In this paper, dark current–voltage (I–V) characteristics, current–temperature (I–T) characteristics, and photocurrents under steady-state X-ray excitation of CVD diamond films were investigated. Results indicated that dark currents and photocurrents by X-ray irradiation for the [001] textured CVD diamond film were greater than those for the non-textured one. The differences in dark currents and resistivities were attributed to a large number of grain boundaries contained in the non-textured diamond films. From the I–T curves, at the temperature higher than 500 K, currents clearly followed an exponential behavior because of the activation energy of E a =1.68 eV which was normally attributed to Si trapped to a vacancy in the diamond lattice.
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