Abstract
Optimal conditions of obtaining perfect Cd1–xFexSe (x<0.08) and Cd1-xMnxTe (x=0.15) epitaxial films are defined. The electrical properties of Cd1–xFexSe (x<0.08) and Cd1-xMnxTe (x=0.15) epitaxial films have been studied at room temperature. It was defined that Cd1–xFexSe semimagnetic semiconductor epitaxial films are of n-type and Cd1-xMnxTe p-type. Electrical resistivity was defined 14.4 ·107 Ohm⋅cm. The effect of γ-irradiation on VAC of Cd1-xMnxTe epitaxial films is studied at doses Dγ ≤ 1.5 кGy.
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