Abstract
AbstractPressure dependences of Hall coefficient RH(P) and resistivity ρ (P) have been measured for n‐ZnO bulk crystals with impurity concentration Ni = 1017–1018 cm–3 and concentration of free electrons ∼1017 cm–3 at T = 300 K at hydrostatic pressures up to P = 25 GPa. It has been found that the exponential increase of RH(P) and ρ (P), observed in the vicinity of the polymorphous transition PPH = 9 GPa, is caused by the increase of ionization energy of shallow donors. At P > PPH, a step‐like decrease of the resistivity has been observed, indicating a phase transition from diamond structure to NaCl‐type structure. In accordance with formulas derived from the ‘heterophase structure – effective medium' model, phase volume fractions in the critical region of the polymorphous transformation have been calculated and the threshold values of normalized effective resistivity have been determined. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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