Abstract
The 30 nm thick (BMN)(O)/200 nm thick BMN(Ar)/30 nm thick BMN(O) multilayer capacitors were prepared on substrates at room temperature by radio-frequency magnetron sputtering to improve both the dielectric constant and leakage current characteristics. The BMN(Ar) percolative capacitors and BMN multilayer capacitors show a dielectric constant of approximately 150 and 63 and dissipation factors of 0.08 and 0.02, respectively, at 100 kHz. The percolative capacitors show a large dispersion of the dielectric properties, while multilayer capacitors show a stable dielectric property as a function of frequency. The leakage current density of the multilayer capacitors shows 1 order of magnitude lower than that of the percolative capacitors. The conduction mechanism of the BMN multilayer films was mainly controlled by a Schottky emission having Schottky barrier heights of about 0.08–0.14 eV. The leakage current characteristics of the BMN percolative films were improved by an appropriate insertion of the BMN(O) interfacial layer at both sides of the BMN percolative films.
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