Abstract
In the present study, AlN x /Al/Mo composite films with various thicknesses of AlN x and Al layers were prepared to replace commercial AlNd/Mo composite film as the gate metal of the two metal layers (namely the gate metal and the source-drain metal) in thin-film transistor (TFT) specimens. The prerequisite for the TFT device is that no hillock is formed. The electrical properties of the AlN x /Al/Mo TFT device rival those of the AlNd/Mo TFT device. One of eight kinds of AlN x /Al/Mo composite films (0.05 µm/0.2 µm/0.07 µm) without hillocks was compared with the AlNd/Mo (0.25 µm/0.07 µm) composite film. The line width after development and strip inspections, the I g (gate leakage current)– V g (gate voltage) curve, the coating film resistance to electricity, the contact resistance between the indium tin oxide (ITO) film and the metal film, the I d– V g curve, and the critical dimension loss (CD loss) were compared. The experimental results indicate that the metal line widths for these two composite films are similar. The coating film resistance, the contact resistance between the ITO film and the metal film, and the I d– V g curve for the AlN x /Al/Mo TFT device were similar to those for the AlNd/Mo TFT device. The CD loss shown in the AlN x /Al/Mo TFT device was lower than that for the AlNd/Mo TFT device.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
