Abstract
GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted much attention owing to the low-cost and the large area availability of the Si substrate. In this paper, the 90-nm-gate-length InAlN/GaN HEMT on silicon was fabricated and the device electrical properties were studied. The device presents a low drain-induced barrier lowing (DIBL) of 43 mV/V, a parasitic source resistance ( R S ) of 0.91 Ω⸱mm, and a peak of the intrinsic transconductance ( g m0 ) of 553 mS/mm. To the best of our knowledge, this is the lowest DIBL value among the reported GaN HMET on Si with gate length ( L g ) below 100 nm. The low-filed two-dimensional electron gas (2DEG) electron mobility ( μ n ) was extracted and the dominated polarization Coulomb field scattering contributed to the increased μ n with the increased of two-dimensional electron gas electron density ( n 2D ). A current gain cutoff frequency ( f T ) of 175 GHz was achieved on InAlN/GaN HEMTs with a gate length of 90-nm.
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