Abstract
In the case of semiconductor diodes, the temperature range over which the temperature dependence of the forward voltage is linear, can be increased by lowering the operating current along with the increase of the sensitivity (dVf/dT) which is found to vary logarithmically with I. The temperature and current dependence of forward voltage Vf can be explained by using the theory of the p-n junction. The capacitance-voltage (C−V) measurements of p-n junctions are carried out at different temperatures and are discussed in light of the theory of the p-n junction. The band gap Eg, estimated from Vf−T measurement, is found to be ∼1.17 eV, whereas it is found to be 1.189 eV from C−V measurement.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
