Abstract
This paper presents an overview of electrical properties measured on advanced gate stacks consisting of a Ru electrode and Hf-based gate dielectrics. The gate stack is projected for application in the sub 45 nm complementary metal-oxide-semiconductor (CMOS) technology node. Ru films were grown by metal-organic chemical vapour deposition (MOCVD) on thin HfO 2, HfSiO x , HfSiON and SiO 2 (control sample) dielectrics. As-deposited and forming gas annealed (90% N 2 + 10% H 2) samples were characterized by means of capacitance–voltage ( C– V) and conductance–voltage ( G– V) measurements. We discuss variation in dielectric constant, interfacial layer thickness, effective metal work function ( Φ m,eff), oxide charge density and density of interface traps. Ru shows Φ m,eff of ∼5.1 eV for all Ru/Hf-based dielectrics gate stacks. We also investigated the thermal stability of the stacks upon rapid thermal annealing (RTA) in the temperature range 800–1000 °C for 10 s. Samples were analyzed by Rutheford backscattering spectroscopy. The results suggest a limited thermal stability of Ru/Hf-based dielectric gate stack during source/drain activation step.
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