Abstract
Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS2-MoSX using sputter deposition and investigate the electronic properties of the nanowalls. MoS2-MoSX nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS2-MoSX nanowalls have a sheet carrier mobility of up to 2 cm2·V−1·s−1 and bulk carrier concentration of ~1017–1019 cm−3 range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS2 nanowall size and mesoscopic electronic transport properties.
Highlights
Transition metal dichalcogenides (TMDs), including MoS2, WS2, NbSe2, and VS2, have been intensely researched because they exhibit bandgaps ranging from 0 to 2 eV
Two-dimensional systems and nanostructured mass production are an important topic for high performance and functional device applications [7,11,15,16,17,18,19,20,21]
MoS2, which consists of weakly bonded S-M-S sandwiched layers, is an interesting material for electronic devices [22,23,24,25,26,27], optical sensors [10,13,18,28,29,30,31], spintronic devices [32,33,34,35], and energy storage [15,17,19]
Summary
Transition metal dichalcogenides (TMDs), including MoS2, WS2, NbSe2, and VS2, have been intensely researched because they exhibit bandgaps ranging from 0 to 2 eV. Tao et al and Hussain et al reported methods for an atomic layer and a few layers of MoS2 large-area growth for application to electronic devices, respectively [6,26]. Kim et al reported a large area growth method of MoS2 nanowalls for efficient photoelectric application [31]. MoS2 nanostructured large-scale growth methods need to be widely developed and improved for future device applications. 400 ◦C rapid thermal annealing (RTA)-treated samples show resistance upturn when applying an external magnetic field of more than 3 T. These results show the feasibility of electromagnetic property tuning through growth conditions and post treatment, such as an annealing process
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
