Abstract
Tunnel magnetoresistance (TuMR) heads are attractive candidates for future high-density recording. To achieve the high areal density, it is necessary for TuMR heads to get lower resistance and higher delta R/R film. A low resistance and high delta R/R tunneling junction film has been developed and used for this study. The resistance area product and delta R/R are 3 /spl Omega//spl middot//spl mu/m/sup 2/ and 18%, respectively. Reliability that includes lifetime was also studied. We have found TuMR heads can be a promising candidate for 100 Gb/in/sup 2/ application.
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