Abstract
Integration of decoupling capacitors into silicon carbide (SiC) metal oxide semiconductor field effect transistor ( mosfet ) modules is an advanced solution to mitigate the effect of parasitic inductance induced by module assembly interconnects. In this paper, the switching transient behavior is reported for a 1.2-kV SiC mosfet module with embedded dc-link capacitors. It shows faster switching transition and less overshoot voltage compared to a module using an identical package but without capacitors. Active power cycling and passive temperature cycling are carried out for package reliability characterization and comparisons are made with commercial Si and SiC power modules. Scanning acoustic microscopy images and thermal structure functions are presented to quantify the effects of package degradation. The results demonstrate that the SiC modules with embedded capacitors have similar reliability performance to commercial modules and that the reliability is not adversely affected by the presence of the decoupling capacitors.
Highlights
IN recent years, Silicon Carbide (SiC) MOSFET power modules have been developing rapidly due to the increasing demand of hybrid electric vehicles/electric vehicles (HEV/EV) as well as compact solutions for solar inverters, industrial drives and high frequency power supplies
A high power SiC MOSFET module with embedded decoupling capacitors has been studied from the switching and packaging reliability perspective
Switching transient characterization of the module with integrated capacitors showed faster switching transition and less overshoot voltage compared with the same semiconductors in an identical package but without embedded capacitors, indicating suppression of the parasitic inductance within the device switching loop and providing favorable conditions for high-frequency operation
Summary
IN recent years, Silicon Carbide (SiC) MOSFET power modules have been developing rapidly due to the increasing demand of hybrid electric vehicles/electric vehicles (HEV/EV) as well as compact solutions for solar inverters, industrial drives and high frequency power supplies. Various solutions have been proposed in an effort to reduce the switching parasitic inductance in the current commutation pass These include rearranging substrate copper trace layout and wire pattern, optimizing packaging design with low DC-link inductance or replacement of bond wires and bus bars [5,6,7,8,9]. The other solution is the integration of DC capacitors inside the power module This configuration provides a low loop inductance for the current commutation loop and minimizes the DC-side parasitic inductance [10, 11]. Electrical performance and assembly integration reliability of a 1.2kV SiC MOSFET module with embedded decoupling capacitors is investigated. The capacitance of the integrated capacitor is characterized before and after cyclic stress
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