Abstract
Perimeter recombination is one of the causes identified for having a nonuniform luminescent coupling effect in III-V multijunction solar cells. A potential solution could be the electrical passivation of the multijunction solar cell perimeter. To test this hypothesis, electrical passivation of InGaP/GaAs/Ge 3-junction solar cells was done by the atomic layer deposition of thin Al 2 O 3 films. Perimeter passivation of a 3-junction solar cell relatively increased current collection measured at luminescent coupling and direct subcell excitation by as much as 11.4% and 29.8%, respectively. Meanwhile, the current homogeneity improved relatively by as much as 7.9% after electrical passivation. At 1-sun global standard illumination (AM 1.5G), 0.2% absolute conversion efficiency increase was achieved. Therefore, electrical passivation of fully working III-V multijunction solar cells is a non-invasive, post-treatment process that can recover losses due to surface defects caused by oxidation. • Post-treatment passivation for fully working multijunction solar cell. • Larger conversion efficiencies in multijunction solar cells with smaller active areas. • Spatial current uniformity improvement after perimeter passivation. • Reduction of shunt leakage current in a subcell made of indirect bandgap material. • Alleviate lateral resistance effects by electrical passivation.
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