Abstract
The effect of irradiation by 1.2-MeV electrons to a dose Φ=2×1017 cm−2 on the electrical, optical, and photoelectric properties of In-doped CdS single crystals was studied. The experimental data obtained permit one to conclude that irradiation initiates decomposition of the supersaturated In solution in CdS, with the indium atoms at the sites of the cation sublattice being expelled by cadmium interstitial atoms. New slow-recombination centers were observed to exist in the irradiated CdS: In samples, with the maxima of optical quenching of the photoconductivity lying in the region of \(\lambda _{M_1 } = 0.75\mu m\) and \(\lambda _{M_2 } = 1.03\mu m\). It is suggested that the new recombination centers are related to complexes containing cadmium vacancies and indium atoms.
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