Abstract
We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using complementary metal-oxide semiconductor (CMOS)-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, reaching an effective value of ∼50 meV. This demonstrates the potential of bilayer graphene as channel material for a field-effect transistor in a conventional CMOS environment.
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