Abstract

In this paper, electrical characteristic of TSV (Through Silicon Via) is analyzed. Firstly, equivalent circuit model of TSV is summarized. Modeling and electrical analysis of TSV is conducted, in which TSVs with ideal and non-ideal profiles are compared. And then, multi-TSV configuration in silicon interposer is modeled and analyzed. Capacitive and inductive coupling between TSVs are simulated. With these analyses, solutions to decrease crosstalk between TSVs are proposed.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call