Abstract
An electrical model of a multi-level Ta2O5/TaOx resistive random-access memory (ReRAM) has been presented. The model is based on tunnelling current which is the dominant conduction mechanism at 3–4 nm oxide layer thickness. The presented model is capable of multi-level switching with four resistance states (LRS≈10 kΩ, IRS-1≈13 kΩ, IRS-2≈20 kΩ, and HRS≈50 kΩ). IRS-1 is achieved between 1.5 V and 1.6 V, IRS-2 is achieved between 1.6 V and 1.8 V, and HRS is achieved above 1.8 V. A comparison with experimental results is conducted and IRS-1 differs by 30.35% while IRS-2 matches well. The simulation results of the presented model show that during RESET phase, the multifilament ReRAM has higher current than the single filament ReRAM. In addition, the presented model successfully displays multi-level behaviour under sine, triangular, and pulse input voltages. Two pulse schemes are analyzed for multi-level switching; an extra resistance state is successfully achieved in one while the other is unfeasible for multi-level applications in the multi-filament model.
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