Abstract
The possibilities of experimental extraction of the correlation length of insulator thickness fluctuations from the data of electrical measurements on thin metal-insulator-semiconductor (MIS) structures are discussed. The procedure of statistical treatment of currents flowing in a random selection of MIS tunnel diodes is developed enabling the estimation of such a length. Another proposed technique is based on the quantitative analysis of soft-breakdown-related current jumps down occurring under high-voltage stress. The novel methods were tested using Al/SiO 2/Si structures and shown to yield the value of correlation length close to that given by a straightforward “covariant” method applied to the thickness profiles of the same oxide films.
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