Abstract
In this work the possibility of controlling carbon intrinsic-doping in GaAs homoepitaxial layers grown by metalorganic vapour phase epitaxy (MOVPE) from the trimethyl-gallium (TMGa) and tertiary-buthyl-arsine (TBAs) precursors was evaluated via the analysis of transport properties as a function of the growth parameters and for two substrates mis-orientations; Hall effect measurements were performed on the samples as a function of temperature. Intrinsically p-doped GaAs layers were obtained with a hole concentration in the range (1014–1018) cm–3 and a corresponding RT mobility in the range (100–400) cm2/Vs. The simultaneous analysis of the Hall free hole density and Hall mobility yielded the effective doping level, the compensation ratio and the thermal ionisation energy of the acceptor impurity as a function of the growth parameters.
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