Abstract
We present a theoretical study on the electrical generation of terahertz (THz) electromagnetic pulses by hot-electrons in AlGaAs/GaAs-based two-dimensional semiconductor systems (2DSSs). The intensity of THz blackbody radiation has been calculated as a function of photon frequency and electron temperature. We consider that the electrons are heated by pulsed electric fields and that the hot-electron interactions with electromagnetic fields are mediated by electron--phonon scattering.
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