Electrical Effect in Organic Thin-Film Transistors Using Polymerized Gate Insulators by Vapor Deposition Polymerization (VDP)

Abstract

We report that the organic thin film transistors were fabricated by the organic gate insulators transistor with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA) and 4,4′-oxydianiline (ODA), and cured at 150 °C for 1 hour followed by 200 °C for 1 hour. Details on the explanation of organic thin-film transistors (OTFTs) electrical characteristics of 6FDA-ODA as gate insulators fabricated thermal co-deposition method.