Abstract
AbstractIn this paper, it was demonstrated that the organic thin‐film transistors were fabricated with the organic gate insulator with vapor deposition polymerization (VDP) processing. The saturated slop in the saturation region and the subthreshold nonlinearity in the triode region were clearly observed in the electrical output characteristics in our organic thin film transistors using the staggered‐inverted top‐contact structure. Field effect mobility, threshold voltage, and on‐off current ratio in 0.45 μm thick gate dielectric layer were about 0.5 cm2/Vs, −5 V, and 105 A/A, respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin‐coating process, where polyimide film was co‐deposited by high‐vacuum thermal evaporation from 6FDA and ODA followed by curing.
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