Abstract
The current communication addresses structural, impedance, conductivity, dielectric permittivity, tangent loss, and ferroelectric hysteresis of selenium doped bismuth titanate (Bi4Ti2.9Se0.1O12) synthesized by a solid-state reaction technique. XRD profile reveals the formation of orthorhombic unit cell structure (B2ab space group) in Bi4Ti2.9Se0.1O12. Partial doping of Se (10%) makes significant modifications in the electrical and dielectric characteristics, which are investigated over discrete frequencies (1 kHz–1 MHz) and temperatures (27–300 °C). The compound exhibits comparatively low value of the tangent loss at 1 MHz frequency. The ferroelectric hysteresis loop of the compound confirms the non-centrosymmetric arrangement of elements at room temperature, and the value of remanent polarization makes the compound suitable for memory applications.
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